×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [18]
内容类型
期刊论文 [18]
发表日期
2011 [3]
2010 [2]
2009 [1]
2007 [1]
2006 [3]
2005 [1]
更多...
学科主题
半导体材料 [18]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共18条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
收藏
  |  
浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
期刊论文
materials letters, 2011, 卷号: 65, 期号: 4, 页码: 667-669
作者:
Liu C
收藏
  |  
浏览/下载:63/7
  |  
提交时间:2011/07/05
Diluted magnetic semiconductors (DMSs)
Ion implantation
Room-temperature ferromagnetic properties
ROOM-TEMPERATURE
Optical properties of Mn+ doped GaAs
期刊论文
optoelectronics and advanced materials-rapid communications, 2010, 卷号: 4, 期号: 6, 页码: 784-787
Zhou HY (Zhou Huiying)
;
Qu SC (Qu Shengchun)
;
Liao SZ (Liao Shuzhi)
;
Zhang FS (Zhang Fasheng)
;
Liu JP (Liu Junpeng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:176/22
  |  
提交时间:2010/08/17
Photoluminescence
Ion implantation
Manganese
GaAs
ION-IMPLANTATION
SEMICONDUCTORS
CENTERS
DOTS
Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method
期刊论文
materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Sun LL (Sun Lili)
;
Liu C (Liu Chao)
;
Li JM (Li Jianming)
;
Wang JX (Wang Junxi)
;
Yan FW (Yan Fawang)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
收藏
  |  
浏览/下载:225/60
  |  
提交时间:2010/05/07
Magnetic materials
Semiconductors
Ion implantation
The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films
期刊论文
materials science and engineering b-advanced functional solid-state materials, 2009, 卷号: 162, 期号: 3, 页码: 209-212
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:91/1
  |  
提交时间:2010/03/08
Ion implantation
Metal organic chemical vapour deposition (MOCVD)
Diluted magnetic semiconductor (DMS)
Nonpolar a-plane GaN
Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4930-4935
Hu LJ (Hu Liang-Jun)
;
Chen YH (Chen Yong-Hai)
;
Ye XL (Ye Xiao-Ling)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
ion implantation
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation
期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang)
;
Wang, ZG (Wang, Zhanguo)
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2010/03/29
nanocavity
nanoparticle
nanoinstabilities
open volume defect
thermodynamic nonequilibrium
nanosize
nanotime
energetic beam irradiation
amorphous structure
nanocurvature
surface energy
WALLED CARBON NANOTUBES
AMORPHOUS-SILICON
ION IRRADIATION
PREFERENTIAL AMORPHIZATION
IN-SITU
INSTABILITY
BEAM
IMPLANTATION
CAVITIES
POINT
Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 184-187
Islam MR (Islam M. R.)
;
Chen NF (Chen N. F.)
;
Yamada M (Yamada M.)
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/04/11
Raman scattering
ferromagnetic semiconductor GaMnN
ion implantation
GROWTH
GAN
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
©版权所有 ©2017 CSpace - Powered by
CSpace