Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy

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	Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
	Jin, L ; Zhou, HY ; Qu, SC ; Wang, ZG
刊名	materials science in semiconductor processing
	2011
卷号	14 期号:2 页码:108-113
关键词	Patterned substrate Ion implantation Ordered nanodots Anodic aluminum oxide QUANTUM DOTS ISLANDS GROWTH SEMICONDUCTORS NANOSTRUCTURES COMPUTATION INGAAS
ISSN号	1369-8001
通讯作者	jin, l (reprint author), chinese acad sci, inst semicond, key lab semicond mat sci, pob 912,a 35,tsinghua e rd, beijing 100083, peoples r china，jinlan06@semi.ac.cn ; qsc@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national basic research program of china (973 program)[2010cb933800]; national natural science foundation of china[60736034, 50990064]
语种	英语
公开日期	2012-02-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22791]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jin, L,Zhou, HY,Qu, SC,et al. Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy[J]. materials science in semiconductor processing,2011,14(2):108-113.
APA	Jin, L,Zhou, HY,Qu, SC,&Wang, ZG.(2011).Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy.materials science in semiconductor processing,14(2),108-113.
MLA	Jin, L,et al."Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy".materials science in semiconductor processing 14.2(2011):108-113.