The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films

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	The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
	Liu C
刊名	materials letters
	2011
卷号	65 期号:4 页码:667-669
关键词	Diluted magnetic semiconductors (DMSs) Ion implantation Room-temperature ferromagnetic properties ROOM-TEMPERATURE
ISSN号	0167-577x
通讯作者	sun, ll, chinese acad sci, inst semicond, beijing 100083, peoples r china. lilisun@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	natural science foundation of china [60876004]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the impact of the annealing temperature on the structural and magnetic characteristics of gan:sm films fabricated by implantation method have been investigated in this paper. high-resolution x-ray diffraction (hrxrd) results indicate that the concentration of defects in samples decreases with increasing annealing temperature. superconducting quantum interference device (squid) results show that all samples exhibit room-temperature ferromagnetic properties and colossal magnetic effect. moreover, the average saturation magnetization per sm atom (ms/sm) of samples decreases sharply with increasing annealing temperature. the strong colossal magnetic effect (496.6 mu(b)/sm) of samples annealed at 700 degrees c may have close relation with its high concentration defects. (c) 2010 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21043]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Liu C. The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films[J]. materials letters,2011,65(4):667-669.
APA	Liu C.(2011).The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films.materials letters,65(4),667-669.
MLA	Liu C."The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films".materials letters 65.4(2011):667-669.