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CORC

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Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN 期刊论文
APPLIED PHYSICS EXPRESS, 2018
作者:  Fu, Houqiang;  Yang, Tsung-Han;  Xu, Ke(徐科);  Ponce, Fernando A.;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载：33/0  |  提交时间：2019/03/27
Optical device structure using GaN substrates for laser applications 专利
专利号: US9722398, 申请日期: 2017-08-01, 公开日期: 2017-08-01
作者:  RARING, JAMES W.;  FEEZELL, DANIEL F.;  PFISTER, NICHOLAS J.;  SHARMA, RAJAT;  SCHMIDT, MATHEW C.
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/24
Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets 专利
专利号: WO2013181040A1, 申请日期: 2013-12-05, 公开日期: 2013-12-05
作者:  BHAT, RAJARAM;  SIZOV, DMITRY SERGEEVICH;  ZAH, CHUNG-EN
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/31
Determination of polar C-plane and nonpolar A-plane AlN-GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
physica status solidi (b), 2013, 卷号: 1, 期号: 4
Huijie Li, Xianglin Liu, Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu, Wei Mao, Yue Hao, Qinsheng Zhu, Zhanguo Wang
收藏  |  浏览/下载：19/0  |  提交时间：2014/03/17
Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates 专利
专利号: US8259769, 申请日期: 2012-09-04, 公开日期: 2012-09-04
作者:  RARING, JAMES W.;  FEEZELL, DANIEL F.
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/26
Laser light emitting device 专利
专利号: US8189640, 申请日期: 2012-05-29, 公开日期: 2012-05-29
作者:  TANAKA, TAKETOSHI;  OKAMOTO, KUNIYOSHI;  OHTA, HIROAKI
收藏  |  浏览/下载：14/0  |  提交时间：2019/12/24
Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 327, 期号: 1, 页码: 94-97
Xu, SR; Zhang, JC; Yang, LA; Zhou, XW; Cao, YR; Zhang, JF; Xue, JS; Liu, ZY; Ma, JC; Bao, F (包峰); Hao, Y
收藏  |  浏览/下载：11/0  |  提交时间：2012/08/24
Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD 会议论文
the 16th International Conference on Crystal Growth in conjunction with the 14th International Conference on Vapor Growth and Epitaxy, Beijing;China, 2010-8
Tingting Jia; Shengming Zhou; Hao Teng; Hui Lin; Xiaorui Hou; Yukun Li; Wenjie Li; Jun Wang; Jianqi Liu; Jun Huang; Kai Huang; Min Zhang; Jianfeng Wang; Ke Xu
收藏  |  浏览/下载：45/0  |  提交时间：2011/03/30
Nonpolar a-plane GaN films grown on gamma-LiAlO2 (3 0 2) substrates by low-pressure MOCVD 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Xu, K (徐科);  Wang, JF (王建峰);  Zhang, M (张敏);  Huang, J (黄俊)
收藏  |  浏览/下载：15/0  |  提交时间：2012/08/23
The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 卷号: 54, 期号: 3, 页码: 446
He, T; Li, H; Dai, LG; Wang, XL; Chen, Y; Ma, ZG; Xu, PQ; Jiang, Y; Wang, L; Jia, HQ; Wang, WX; Chen, H
收藏  |  浏览/下载：20/0  |  提交时间：2013/09/23

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