Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method

	Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method
	Sun LL (Sun Lili) ; Liu C (Liu Chao) ; Li JM (Li Jianming) ; Wang JX (Wang Junxi) ; Yan FW (Yan Fawang) ; Zeng YP (Zeng Yiping) ; Li JM (Li Jinmin)
刊名	materials letters
	2010
卷号	64 期号:9 页码:1031-1033
关键词	Magnetic materials Semiconductors Ion implantation
通讯作者	sun, ll, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: lilisun@semi.ac.cn
合作状况	其它
英文摘要	diluted-magnetic gan:sm:eu films have been fabricated by co-implantation of sm and eu ions into c-plane (0001) gan films and a subsequent annealing process. the structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution x-ray diffraction (hrxrd), atomic force microscopy (afm), and superconducting quantum interference device (squid). the xrd and afm analyses show that the annealing process can effectively recover the crystalline degradation caused by implantation. compared with gan:sm films, more defects have been introduced into gan:sm:eu films due to the eu implantation process. according to the squid analysis, gan:sm:eu films exhibit clear room-temperature ferromagnetism. moreover, gan:sm:eu films show a lower saturation magnetization (ms) than gan:sm films.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-07t13:42:15z no. of bitstreams: 1 structural and magnetic properties of gansmeu films fabricated by co-implantation method.pdf: 517986 bytes, checksum: e16ef0f3d25bfce3da4b6bb551a3eda4 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-07t13:42:49z (gmt) no. of bitstreams: 1 structural and magnetic properties of gansmeu films fabricated by co-implantation method.pdf: 517986 bytes, checksum: e16ef0f3d25bfce3da4b6bb551a3eda4 (md5); made available in dspace on 2010-05-07t13:42:49z (gmt). no. of bitstreams: 1 structural and magnetic properties of gansmeu films fabricated by co-implantation method.pdf: 517986 bytes, checksum: e16ef0f3d25bfce3da4b6bb551a3eda4 (md5) previous issue date: 2010; natural science foundation of china 60876004; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	natural science foundation of china 60876004
语种	英语
公开日期	2010-05-07 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11227]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Sun LL ,Liu C ,Li JM ,et al. Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method[J]. materials letters,2010,64(9):1031-1033.
APA	Sun LL .,Liu C .,Li JM .,Wang JX .,Yan FW .,...&Li JM .(2010).Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method.materials letters,64(9),1031-1033.
MLA	Sun LL ,et al."Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method".materials letters 64.9(2010):1031-1033.