Photoluminescence from C+ ion-implanted and electrochemical etched Si layers

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	Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
	Shi LW (Shi Liwei) ; Wang Q (Wang Qiang) ; Li YG (Li Yuguo) ; Xue CS (Xue Chengshan) ; Zhuang HZ (Zhuang Huizhao)
刊名	applied surface science
	2006
卷号	252 期号:24 页码:8424-8427
关键词	ion implantation annealing chemical etching photoluminescence POROUS SILICON LUMINESCENCE
ISSN号	0169-4332
通讯作者	shi, lw, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail: liweishi@semi.ac.en
中文摘要	the microstructural and optical analysis of si layers emitting blue luminescence at about 431 nm is reported. these structures have been synthesized by c+ ion implantation and high-temperature annealing in hydrogen atmosphere and electrochemical etching sequentially. with the increasing etching time, the intensity of the blue peak increases at first, decreases then and is substituted by a new red peak at 716 nm at last, which shows characteristics of the emission of porous silicon. c=o compounds are induced during c+ implantation and nanometer silicon with embedded structure is formed during annealing, which contributes to the blue emission. the possible mechanism of photoluminescence is presented. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10304]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shi LW ,Wang Q ,Li YG ,et al. Photoluminescence from C+ ion-implanted and electrochemical etched Si layers[J]. applied surface science,2006,252(24):8424-8427.
APA	Shi LW ,Wang Q ,Li YG ,Xue CS ,&Zhuang HZ .(2006).Photoluminescence from C+ ion-implanted and electrochemical etched Si layers.applied surface science,252(24),8424-8427.
MLA	Shi LW ,et al."Photoluminescence from C+ ion-implanted and electrochemical etched Si layers".applied surface science 252.24(2006):8424-8427.