Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation

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	Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation
	Islam MR (Islam M. R.) ; Chen NF (Chen N. F.) ; Yamada M (Yamada M.)
刊名	materials science in semiconductor processing
	2006
卷号	9 期号:1-3 页码:184-187
关键词	Raman scattering ferromagnetic semiconductor GaMnN ion implantation GROWTH GAN
ISSN号	1369-8001
通讯作者	islam, mr, khulna univ engn & technol, dept elect & elect engn, khulna 920300, bangladesh. e-mail: islambit@yahoo.com
中文摘要	raman scattering measurements have been carried out on ferromagnetic semiconductor ga1-xmnxn prepared by mn-ion implantation and post annealing. the raman results obtained from the annealed and un-annealed ga1-xmnxn demonstrate that crystalline quality has been improved in ga1-xmnxn after annealing. some new vibrational modes in addition to gan-like modes are found in the raman spectra measured from the ga1-xmnxn where the gan-like modes are found to be shifted in the higher frequency side than those measured from the bulk gan. a new vibrational mode observed is assigned to mnn-like mode. other new phonon modes observed are assigned to disorder-activated modes and mn-related vibrational modes caused by mn-ion implantation and post-annealing. (c) 2006 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10536]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Islam MR ,Chen NF ,Yamada M . Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation[J]. materials science in semiconductor processing,2006,9(1-3):184-187.
APA	Islam MR ,Chen NF ,&Yamada M .(2006).Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation.materials science in semiconductor processing,9(1-3),184-187.
MLA	Islam MR ,et al."Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation".materials science in semiconductor processing 9.1-3(2006):184-187.