Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC

	Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
	Wu, Hailei ; Sun, Guosheng ; Yang, Ting ; Yan, Guoguo ; Wang, Lei ; Zhao, Wanshun ; Liu, Xingfang ; Zeng, Yiping ; Wen, Jialiang
刊名	journal of semiconductors
	2011
卷号	32 期号:7 页码:72002
关键词	Aluminum Annealing Ion implantation Pressure effects Semiconducting silicon compounds Silicon carbide Surface roughness
ISSN号	16744926
通讯作者	wu, h.(hlwu@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23042]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Wu, Hailei,Sun, Guosheng,Yang, Ting,et al. Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC[J]. journal of semiconductors,2011,32(7):72002.
APA	Wu, Hailei.,Sun, Guosheng.,Yang, Ting.,Yan, Guoguo.,Wang, Lei.,...&Wen, Jialiang.(2011).Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC.journal of semiconductors,32(7),72002.
MLA	Wu, Hailei,et al."Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC".journal of semiconductors 32.7(2011):72002.