Optical properties of Mn+ doped GaAs
Zhou HY (Zhou Huiying) ; Qu SC (Qu Shengchun) ; Liao SZ (Liao Shuzhi) ; Zhang FS (Zhang Fasheng) ; Liu JP (Liu Junpeng) ; Wang ZG (Wang Zhanguo)
刊名optoelectronics and advanced materials-rapid communications
2010
卷号4期号:6页码:784-787
关键词Photoluminescence Ion implantation Manganese GaAs ION-IMPLANTATION SEMICONDUCTORS CENTERS DOTS
合作状况国内
学科主题半导体材料
收录类别SCI
资助信息the above work was supported by the national basic research program of china (2006cb604904, 2006cb604908), the hi-tech r & d program of china (2006aa03z0408, 2006aa03z0404), the scientific research fund of central south university of forstry and technology.
公开日期2010-08-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/13475]  
专题半导体研究所_中科院半导体材料科学重点实验室
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Zhou HY ,Qu SC ,Liao SZ ,et al. Optical properties of Mn+ doped GaAs[J]. optoelectronics and advanced materials-rapid communications,2010,4(6):784-787.
APA Zhou HY ,Qu SC ,Liao SZ ,Zhang FS ,Liu JP ,&Wang ZG .(2010).Optical properties of Mn+ doped GaAs.optoelectronics and advanced materials-rapid communications,4(6),784-787.
MLA Zhou HY ,et al."Optical properties of Mn+ doped GaAs".optoelectronics and advanced materials-rapid communications 4.6(2010):784-787.
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