Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation

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	Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
	Hu LJ (Hu Liang-Jun) ; Chen YH (Chen Yong-Hai) ; Ye XL (Ye Xiao-Ling) ; Wang ZG (Wang Zhan-Guo)
刊名	acta physica sinica
	2007
卷号	56 期号:8 页码:4930-4935
关键词	ion implantation
ISSN号	issn: 1000-3290
通讯作者	hu, lj, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: liangjun_hu@yahoo.com.cn
中文摘要	mn ions were doped into inas/gaas quantum dots samples by high energy. implantation and subsequent annealing. the optical and electric properties of the samples have been studied. the photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. by studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. the latter change in the photoluminescence peaks is probably attributed to that mn ions entering the inas quantum dots, which release the strain of the quantum dots. for the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 k.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9344]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Hu LJ ,Chen YH ,Ye XL ,et al. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation[J]. acta physica sinica,2007,56(8):4930-4935.
APA	Hu LJ ,Chen YH ,Ye XL ,&Wang ZG .(2007).Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation.acta physica sinica,56(8),4930-4935.
MLA	Hu LJ ,et al."Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation".acta physica sinica 56.8(2007):4930-4935.