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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 4, 页码: 1377-1382 作者:  Wang, Yiming;  Yang, Jin;  Wang, Hanbin;  Zhang, Jiawei;  Li, He 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 Amorphous indium-gallium-zinc oxide ( a-InGaZnO)  current gain  high  frequency  thin-film transistor (TFT)   Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017 Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Amorphous indium gallium zinc oxide  Thin film transistors  Source-drain parasitic resistance  TiO2:Nb  Films thickness  THRESHOLD VOLTAGE  ANATASE TIO2  PERFORMANCE  SHIFT  TFTS   Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Amorphous indium gallium zinc oxide (a-IGZO)  thin film transistors (TFTs)  back-channel-etch (BCE) process  Nb doped TiO2  THRESHOLD VOLTAGE  CARBON-NANOFILM  BARRIER LAYER  PERFORMANCE  SHIFT   Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1540-1542 作者:  Wan, Da;  Abliz, Ablat;  Su, Meng;  Liu, Chuangsheng;  Jiang, Changzhong 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/21 Amorphous indium-gallium-zinc-oxide (a-InGaZnO)  1/f noise model  thin-film transistors (TFTs)  indium-tin-oxide (ITO) nanowire (NW)  low-frequency noise (LFN)   Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 11 作者:  Wan, Da;  Abliz, Ablat;  Su, Meng;  Liu, Chuangsheng;  Jiang, Changzhong 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05 Amorphous indium-gallium-zinc-oxide (a-InGaZnO)  indium-tin-oxide (ITO) nanowire (NW)  thin-film transistors (TFTs)  low-frequency noise (LFN)  1/f noise model   Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors 期刊论文 IEEE Electron Device Letters, 2017, 卷号: Vol.38 No.11, 页码: 1540-1542 作者:  Wan, D;  Abliz, A;  Su, M;  Liu, CS;  Jiang, CZ 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31 Indium tin oxide  Thin film transistors  Iron  1/f noise  Electron traps  Logic gates  Fluctuations  Amorphous indium-gallium-zinc-oxide (a-InGaZnO)  indium-tin-oxide (ITO) nanowire (NW)  thin-film transistors (TFTs)  low-frequency noise (LFN)  1/f noise model   A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Deng, Wei; Xiao, Xiang; Shao, Yang; Song, Zhen; Lee, Chia-Yu; Lien, Alan; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Aluminum-doped ZnO (AZO)  amorphous indium-gallium-zinc oxide (a-IGZO)  back-channel-etch (BCE)  pixel electrode (PE)  thin-film transistor (TFT)  wet etch  THRESHOLD VOLTAGE  PERFORMANCE  DAMAGE  LAYER  TFTS  SIO2   Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Shao, Yang; Xiao, Xiang; He, Xin; Deng, Wei; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Amorphous indium-gallium-zinc oxide (a-IGZO)  anodized HfO2  high-k  low voltage  thin-film transistors (TFTs)  OXIDE  TEMPERATURE  ALUMINUM