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科研机构
武汉大学 [14]
福州大学 [6]
湖南大学 [2]
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期刊论文 [22]
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2019 [3]
2018 [8]
2017 [5]
2016 [4]
2015 [2]
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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
期刊论文
Applied Surface Science, 2019, 卷号: 475
作者:
Abliz, Ablat
;
Xu, Lei
;
Wan, Da
;
Duan, Haiming
;
Wang, Jingli
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/05
Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 卷号: 95
作者:
Abliz, Ablat
;
Wan, Da
;
Yang, Linyu
;
Mamat, Mamatrishat
;
Chen, Henglei
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/12/05
Zinc oxide
Thin film transistors
Carrier concentration
Stability
Doping
Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 475
作者:
Abliz, Ablat
;
Xu, Lei
;
Wan, Da
;
Duan, Haiming
;
Wang, Jingli
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
Zinc oxide (ZnO)
Thin film transistors (TFTs)
Bias stress stability
Doping
Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 1018-1022
作者:
Wan, Da
;
Liu, Xingqiang
;
Abliz, Ablat
;
Liu, Chuansheng
;
Yang, Yanbing
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/21
tungsten (W)-doping
pulsed current-voltage (I-V)
solution processed
Indium zinc oxide (IZO)
thin-film transistors (TFTs)
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2844-2849
作者:
Abliz, Ablat
;
Wan, Da
;
Chen, Jui-Yuan
;
Xu, Lei
;
He, Jiawei
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/11/21
passivation layers (PVLs)
light illumination stress stability
Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)
thin film transistors (TFTs)
Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance
期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 期号: 3
作者:
Wan, Da
;
Liu, Xingqiang
;
Abliz, Ablat
;
Liu, Chuansheng
;
Yang, Yanbing
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/05
Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors
期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 25
作者:
Li, Guoli
;
Abliz, Ablat
;
Xu, Lei
;
Andre, Nicolas
;
Liu, Xingqiang
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/05
Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 3
作者:
Wan, Da
;
Liu, Xingqiang
;
Abliz, Ablat
;
Liu, Chuansheng
;
Yang, Yanbing
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/05
Indium zinc oxide (IZO)
pulsed current-voltage (I-V)
solution processed
thin-film transistors (TFTs)
tungsten (W)-doping
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 7
作者:
Abliz, Ablat
;
Wan, Da
;
Chen, Jui-Yuan
;
Xu, Lei
;
He, Jiawei
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/05
Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)
light illumination stress stability
passivation layers (PVLs)
thin film transistors (TFTs)
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: Vol.65 No.7, 页码: 2844-2849
作者:
Abliz, Ablat
;
Wan, Da
;
Chen, Jui-Yuan
;
Xu, Lei
;
He, Jiawei
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/26
Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)
light illumination stress stability
passivation layers (PVLs)
thin film transistors (TFTs)
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