Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors | |
Wan, Da; Abliz, Ablat; Su, Meng; Liu, Chuangsheng; Jiang, Changzhong; Li, Guoli; Chen, Huipeng; Guo, Tailiang; Liu, Xingqiang; Liao, Lei | |
刊名 | IEEE ELECTRON DEVICE LETTERS |
2017 | |
卷号 | 38页码:1540-1542 |
关键词 | Amorphous indium-gallium-zinc-oxide (a-InGaZnO) 1/f noise model thin-film transistors (TFTs) indium-tin-oxide (ITO) nanowire (NW) low-frequency noise (LFN) |
ISSN号 | 0741-3106 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2892900 |
专题 | 福州大学 |
推荐引用方式 GB/T 7714 | Wan, Da,Abliz, Ablat,Su, Meng,et al. Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2017,38:1540-1542. |
APA | Wan, Da.,Abliz, Ablat.,Su, Meng.,Liu, Chuangsheng.,Jiang, Changzhong.,...&Liao, Lei.(2017).Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors.IEEE ELECTRON DEVICE LETTERS,38,1540-1542. |
MLA | Wan, Da,et al."Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors".IEEE ELECTRON DEVICE LETTERS 38(2017):1540-1542. |
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