| Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors | |
| Wan, D; Abliz, A; Su, M; Liu, CS; Jiang, CZ; Li, GL; Chen, HP; Guo, TL; Liu, XQ; Liao, L | |
| 刊名 | IEEE Electron Device Letters
 |
| 2017 | |
| 卷号 | Vol.38 No.11页码:1540-1542 |
| 关键词 | Indium tin oxide Thin film transistors Iron 1/f noise Electron traps Logic gates Fluctuations Amorphous indium-gallium-zinc-oxide (a-InGaZnO) indium-tin-oxide (ITO) nanowire (NW) thin-film transistors (TFTs) low-frequency noise (LFN) 1/f noise model |
| ISSN号 | 0741-3106 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6040213 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China 2.Hunan Univ, Sch Phys & Elect, Key Lab Micro Nanooptoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China 3.Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Fujian, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wan, D,Abliz, A,Su, M,et al. Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors[J]. IEEE Electron Device Letters,2017,Vol.38 No.11:1540-1542. |
| APA | Wan, D.,Abliz, A.,Su, M.,Liu, CS.,Jiang, CZ.,...&Liao, L.(2017).Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors.IEEE Electron Device Letters,Vol.38 No.11,1540-1542. |
| MLA | Wan, D,et al."Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors".IEEE Electron Device Letters Vol.38 No.11(2017):1540-1542. |
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