Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate   Dielectric

doi:10.1109/LED.2015.2422895

CORC > 北京大学 > 信息科学技术学院

	Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric
	Shao, Yang ; Xiao, Xiang ; He, Xin ; Deng, Wei ; Zhang, Shengdong
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
关键词	Amorphous indium-gallium-zinc oxide (a-IGZO) anodized HfO2 high-k low voltage thin-film transistors (TFTs) OXIDE TEMPERATURE ALUMINUM
DOI	10.1109/LED.2015.2422895
英文摘要	Low-voltage amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with thin HfO2 gate dielectric grown by anodic oxidation (anodization) method are investigated. The morphological and electrical properties of the anodized thin HfO2 film are studied. It is shown that the as-grown HfO2 film with an equivalent oxide thickness of 3.8 nm has a low leakage current density of 3.6 x 10(-8) A/cm(2) at 1 MV/cm and high dielectric constant of similar to 21. The room-temperature fabricated a-IGZO TFTs with the anodized HfO2 gate dielectrics exhibit a low threshold voltage of -0.15 +/- 0.08 V, small subthreshold swing value of 109 +/- 4 mV/decade, reasonable saturation mobility of 8.1 +/- 0.2 cm(2)/Vs, and an ON/OFF current ratio exceeding 1 x 10(7).; Shenzhen Thin-Film Transistors and Advanced Display Laboratory; National Science Foundation of China [61274084]; Shenzhen Municipal Scientific Program [JCYJ20120829170028552]; SCI(E); EI; ARTICLE; zhangsd@pku.edu.cn; 6; 573-575; 36
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/419738]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shao, Yang,Xiao, Xiang,He, Xin,et al. Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	Shao, Yang,Xiao, Xiang,He, Xin,Deng, Wei,&Zhang, Shengdong.(2015).Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric.IEEE ELECTRON DEVICE LETTERS.
MLA	Shao, Yang,et al."Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric".IEEE ELECTRON DEVICE LETTERS (2015).