A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology   With Al-Doped ZnO as Source/Drain and Pixel Electrodes

doi:10.1109/TED.2016.2542862

CORC > 北京大学 > 信息科学技术学院

	A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes
	Deng, Wei ; Xiao, Xiang ; Shao, Yang ; Song, Zhen ; Lee, Chia-Yu ; Lien, Alan ; Zhang, Shengdong
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2016
关键词	Aluminum-doped ZnO (AZO) amorphous indium-gallium-zinc oxide (a-IGZO) back-channel-etch (BCE) pixel electrode (PE) thin-film transistor (TFT) wet etch THRESHOLD VOLTAGE PERFORMANCE DAMAGE LAYER TFTS SIO2
DOI	10.1109/TED.2016.2542862
英文摘要	A back-channel-etched fabrication process for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is proposed, in which an alumium-doped ZnO (AZO) transparent conductive film is used to form both source/drain and pixel electrodes. It is demonstrated that rinsed acetic acid solution has a high etching selectivity over 100:1 between AZO and a-IGZO. In addition, bus and interconnect lines are formed in a separate fabrication step in this process, so that the Cu process could be adopted without bringing contamination issue.; National Natural Science Foundation of China [61274084]; Shenzhen Municipal Scientific Program [JCYJ20120829170028552]; SCI(E); EI; ARTICLE; wei_deng160@163.com; xiaoxiang1988829@163.com; 798068288@qq.com; 460243884@qq.com; cy.lee@tcl.com; alan.lien@tcl.com; zhangsd@pku.edu.cn; 5; 2205-2209; 63
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437300]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Deng, Wei,Xiao, Xiang,Shao, Yang,et al. A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016.
APA	Deng, Wei.,Xiao, Xiang.,Shao, Yang.,Song, Zhen.,Lee, Chia-Yu.,...&Zhang, Shengdong.(2016).A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Deng, Wei,et al."A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes".IEEE TRANSACTIONS ON ELECTRON DEVICES (2016).