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CORC

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Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2844-2849
作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei
收藏  |  浏览/下载：9/0  |  提交时间：2019/11/21
High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 9, 页码: 8102-8109
作者:  Yu, Jingjing;  Javaid, Kashif;  Liang, Lingyan;  Wu, Weihua;  Liang, Yu
收藏  |  浏览/下载：34/0  |  提交时间：2018/12/04
Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 4, 页码: 1377-1382
作者:  Wang, Yiming;  Yang, Jin;  Wang, Hanbin;  Zhang, Jiawei;  Li, He
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 7
作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/05
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: Vol.65 No.7, 页码: 2844-2849
作者:  Abliz, Ablat;  Wan, Da;  Chen, Jui-Yuan;  Xu, Lei;  He, Jiawei
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/26
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017
Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong
收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1540-1542
作者:  Wan, Da;  Abliz, Ablat;  Su, Meng;  Liu, Chuangsheng;  Jiang, Changzhong
收藏  |  浏览/下载：2/0  |  提交时间：2019/11/21
Carrier trapping anisotropy in ambipolar SnO thin-film transistors 期刊论文
SOLID-STATE ELECTRONICS, 2017, 卷号: 129, 页码: 88-92
作者:  Liang, Lingyan;  Luo, Hao;  Cao, Hongtao
收藏  |  浏览/下载：13/0  |  提交时间：2017/12/25
High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 879-882
作者:  Hu, Shiben[1];  Lu, Kuankuan[1];  Ning, Honglong[1];  Zheng, Zeke[1];  Zhang, Hongke[1]
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24

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