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	Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors
	Wan, Da; Abliz, Ablat; Su, Meng; Liu, Chuangsheng; Jiang, Changzhong; Li, Guoli; Chen, Huipeng; Guo, Tailiang; Liu, Xingqiang; Liao, Lei
刊名	IEEE ELECTRON DEVICE LETTERS
	2017
卷号	38期号:11
关键词	Amorphous indium-gallium-zinc-oxide (a-InGaZnO) indium-tin-oxide (ITO) nanowire (NW) thin-film transistors (TFTs) low-frequency noise (LFN) 1/f noise model
ISSN号	0741-3106
DOI	10.1109/LED.2017.2757144
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4096385
专题	武汉大学
推荐引用方式 GB/T 7714	Wan, Da,Abliz, Ablat,Su, Meng,et al. Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2017,38(11).
APA	Wan, Da.,Abliz, Ablat.,Su, Meng.,Liu, Chuangsheng.,Jiang, Changzhong.,...&Liao, Lei.(2017).Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors.IEEE ELECTRON DEVICE LETTERS,38(11).
MLA	Wan, Da,et al."Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors".IEEE ELECTRON DEVICE LETTERS 38.11(2017).

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