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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:98/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:
Xiaorong Luo
;
Yang Yang
;
Tao Sun
;
Jie Wei
;
Diao Fan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/17
Anodes
Resistance
Current density
Silicon-on-insulator
Insulated gate bipolar transistors
Spontaneous emission
Sun
Low-loss
p-type polysilicon
self-adaptive resistance (SAR)
shorted-anode (SA)
snapback-free
silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 249-254
作者:
Yongwei Chang
;
Jiexin Luo
;
Jing Chen
;
Lingda Xu
;
Zhan Chai
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/13
MOSFET
circuits
Integrated
circuit
modeling
Semiconductor
device
modeling
Radio
frequency
MOSFET
Analytical
models
Mathematical
model
Body
contact
compact
model
floating
body
effects
(FBEs)
impact
ionization
partially
depleted
silicon-on-insulator
(PD-SOI)
radio
frequency
(RF)
tunnel
diode
body
contact
(TDBC)
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715
作者:
Shu, Lei
;
Wang, Liang
;
Zhou, Xin
;
Li, Tong-De
;
Yuan, Zhang-Yi'an
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)
BVDS variations
laterally diffused metal-oxide-semiconductor (LDMOS)
radiation effects
SOI
technology computer-aided design (TCAD) simulations
total ionizing dose (TID)
The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 1091-1100
作者:
Gu, Song
;
Liu, Jie
;
Bi, Jinshun
;
Zhao, Fazhan
;
Zhang, Zhangang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2018/07/16
Energy dependence
heavy ions
nuclear reactions
silicon-on-insulator (SOI) technology
single event upset (SEU)
Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile
期刊论文
IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690
作者:
Huang, Huixiang
;
Wei, Sufen
;
Pan, Jinyan
;
Xu, Wenbin
;
Chen, Chi-Cheng
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/26
Gaussians
Integrated circuit modeling
Interface traps
MOS-FET
Short-channel effect
Silicon on insulator (SOI)
Threshold voltage modeling
Total dose radiation
Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance
期刊论文
MICROMACHINES, 2018, 卷号: 9
作者:
Zhang, Guo-Dong
;
Zhao, Yu-Long
;
Zhao, Yun
;
Wang, Xin-Chen
;
Wei, Xue-Yong
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/11/26
high-temperature resistance
microelectromechanical systems (MEMS) technology
silicon-on-insulator (SOI) piezoresistive element
small size
ultra-high pressure sensor
Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2018, 卷号: 54
作者:
Cai, Hao
;
Wang, You
;
Naviner, Lirida Alves de Barros
;
Yang, Jun
;
Zhao, Weisheng
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/30
Flip-flop (FF)
forward back bias (FBB)
fully depleted silicon on insulator (FD-SOI)
magnetic tunnel junction (MTJ)/CMOS integration
near-/sub-threshold
ultralow power
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