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	Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile
	Huang, Huixiang; Wei, Sufen; Pan, Jinyan; Xu, Wenbin; Chen, Chi-Cheng; Mei, Qiang; Chen, Jinhai; Geng, Li; Zhang, Zhengxuan; Du, Yong
刊名	IEEE Transactions on Nuclear Science
	2018
卷号	65页码:2679-2690
关键词	Gaussians Integrated circuit modeling Interface traps MOS-FET Short-channel effect Silicon on insulator (SOI) Threshold voltage modeling Total dose radiation
ISSN号	0018-9499
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2921038
专题	西安交通大学
推荐引用方式 GB/T 7714	Huang, Huixiang,Wei, Sufen,Pan, Jinyan,et al. Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile[J]. IEEE Transactions on Nuclear Science,2018,65:2679-2690.
APA	Huang, Huixiang.,Wei, Sufen.,Pan, Jinyan.,Xu, Wenbin.,Chen, Chi-Cheng.,...&Du, Yong.(2018).Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile.IEEE Transactions on Nuclear Science,65,2679-2690.
MLA	Huang, Huixiang,et al."Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile".IEEE Transactions on Nuclear Science 65(2018):2679-2690.

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