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	A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
	Xiaorong Luo; Yang Yang; Tao Sun; Jie Wei; Diao Fan; Dongfa Ouyang; Gaoqiang Deng; Yonghui Yang; Bo Zhang; Zhaoji Li
刊名	IEEE Transactions on Electron Devices
	2019
卷号	Vol.66 No.3页码:1390-1395
关键词	Anodes Resistance Current density Silicon-on-insulator Insulated gate bipolar transistors Spontaneous emission Sun Low-loss p-type polysilicon self-adaptive resistance (SAR) shorted-anode (SA) snapback-free silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
ISSN号	0018-9383;1557-9646
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4743617
专题	湖南大学
作者单位	1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China 2.China Electronics Technology Group Corporation, Research Institute, Chongqing, China
推荐引用方式 GB/T 7714	Xiaorong Luo,Yang Yang,Tao Sun,et al. A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance[J]. IEEE Transactions on Electron Devices,2019,Vol.66 No.3:1390-1395.
APA	Xiaorong Luo.,Yang Yang.,Tao Sun.,Jie Wei.,Diao Fan.,...&Zhaoji Li.(2019).A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance.IEEE Transactions on Electron Devices,Vol.66 No.3,1390-1395.
MLA	Xiaorong Luo,et al."A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance".IEEE Transactions on Electron Devices Vol.66 No.3(2019):1390-1395.

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