The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs

doi:10.1109/TNS.2018.2817574

	The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs
	Gu, Song1,2 ; Liu, Jie1 ; Bi, Jinshun 3,4; Zhao, Fazhan 3,4; Zhang, Zhangang 5; Xi, Kai 3,4; Peng, Kai 2; Zhang, Yingjun 2
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2018-05
卷号	65 页码:1091-1100
关键词	Energy dependence heavy ions nuclear reactions silicon-on-insulator (SOI) technology single event upset (SEU)
ISSN号	0018-9499
DOI	10.1109/TNS.2018.2817574
英文摘要	The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted siliconon- insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with the increase of C-12 ion linear energy transfer (LET) from 1.7 to 3.0 MeV/(mg/cm(2)). Furthermore, data from angled irradiations show that the SEU cross sections almost remain unchanged with the increase of effective LET in the subthreshold LET region. Geant4 simulation indicates that this anomalous trend of SEU cross sections is mainly attributed to energy effects of nuclear reactions between primary ions and material atoms. The SEU cross sections at subthreshold LET values are closely related to the energy of incident ions. Secondary Mg and Al ions produced by primary C-12 ion nuclear reactions are the main ions to introduce the SEUs. A method is proposed for calculating the SEU cross sections induced by low LET heavy ions. The SEU cross sections calculated by Geant4 simulation with low LET heavy ions match well with the experimental results. The energy dependence of SEUs produced by low LET heavy ions implies that at accelerator-based SEU tests, the high-energy heavy ions with low LETs need to be utilized to estimate the contribution of indirect ionization to SEU cross sections for hardened devices with high-LET thresholds.
资助项目	National Natural Science Foundation of China[11605134] ; National Natural Science Foundation of China[U1532261] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11605135]
WOS关键词	CROSS-SECTION MEASUREMENTS ; NUCLEAR-REACTIONS ; THRESHOLD ; MICROELECTRONICS ; TECHNOLOGIES ; SIMULATION ; LATCHUP ; BEAM
WOS研究方向	Engineering ; Nuclear Science & Technology
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000432470500002
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/56800]
专题	中国科学院近代物理研究所
通讯作者	Gu, Song
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.China Acad Space Technol, Xian Branch, Xian 710100, Shaanxi, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Gu, Song,Liu, Jie,Bi, Jinshun,et al. The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65:1091-1100.
APA	Gu, Song.,Liu, Jie.,Bi, Jinshun.,Zhao, Fazhan.,Zhang, Zhangang.,...&Zhang, Yingjun.(2018).The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65,1091-1100.
MLA	Gu, Song,et al."The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65(2018):1091-1100.