| Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers | |
| Abliz, Ablat; Wan, Da; Chen, Jui-Yuan; Xu, Lei; He, Jiawei; Yang, Yanbing; Duan, Haiming; Liu, Chuansheng; Jiang, Changzhong; Chen, Huipeng | |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 2018 | |
| 卷号 | Vol.65 No.7页码:2844-2849 |
| 关键词 | Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO) light illumination stress stability passivation layers (PVLs) thin film transistors (TFTs) |
| ISSN号 | 0018-9383 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5463441 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Key Laboratory for Micro-/Nano-Optoelectronic Devices, Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 2.410082, China 3.School of Physics Science and Technology, Xinjiang University, Urumqi 4.830046, China 5.S |
| 推荐引用方式 GB/T 7714 | Abliz, Ablat,Wan, Da,Chen, Jui-Yuan,et al. Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,Vol.65 No.7:2844-2849. |
| APA | Abliz, Ablat.,Wan, Da.,Chen, Jui-Yuan.,Xu, Lei.,He, Jiawei.,...&Liao, Lei.(2018).Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers.IEEE TRANSACTIONS ON ELECTRON DEVICES,Vol.65 No.7,2844-2849. |
| MLA | Abliz, Ablat,et al."Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers".IEEE TRANSACTIONS ON ELECTRON DEVICES Vol.65 No.7(2018):2844-2849. |
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