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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer 期刊论文 2018, 卷号: 65, 期号: 2, 页码: 537 作者:  Ning, Honglong[1];  Zeng, Yong[1];  Zheng, Zeke[1];  Zhang, Hongke[1];  Fang, Zhiqiang[1] 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/10 Novel beta-lactam/beta-lactamase inhibitors versus alternative antibiotics for the treatment of complicated intra-abdominal infection and complicated urinary tract infection: a meta-analysis of randomized controlled trials 期刊论文 2018, 卷号: 16, 期号: 2, 页码: 111 作者:  Chen, Mengmeng[1,2];  Zhang, Minjie[3];  Huang, Peixian[1,2];  Lin, Qiongyu[1];  Sun, Cheng[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/10 Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer 期刊论文 2018, 卷号: 65, 期号: 2, 页码: 537 作者:  Ning, Honglong[1];  Zeng, Yong[1];  Zheng, Zeke[1];  Zhang, Hongke[1];  Fang, Zhiqiang[1] 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/10 High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment 期刊论文 2018, 卷号: 6, 期号: 10, 页码: 2522 作者:  Yao, Rihui[1];  Zheng, Zeke[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/06 All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process 期刊论文 2017, 卷号: 5, 期号: [db:dc_citation_issue], 页码: 7043 作者:  Zheng, Zeke[1];  Zeng, Yong[1];  Yao, Rihui[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1] 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/03 Island-Like AZO/Al2O3 Bilayer Channel Structure for Thin Film Transistors 期刊论文 ADVANCED MATERIALS INTERFACES, 2017, 卷号: 4 作者:  Zeng, Yong[1];  Ning, Honglong[2];  Zheng, Zeke[3];  Zhang, Hongke[4];  Fang, Zhiqiang[5] 收藏  |  浏览/下载：13/0  |  提交时间：2019/04/24 azo island films  bilayer channel structures  electron bridges  oxide thin film transistors   High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 879-882 作者:  Hu, Shiben[1];  Lu, Kuankuan[1];  Ning, Honglong[1];  Zheng, Zeke[1];  Zhang, Hongke[1] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24 Aluminum oxide  copper  thin film transistors   All-sputtered, flexible, bottom-gate IGZO/Al2O3bi-layer thin film transistors on PEN fabricated by a fully room temperature process 期刊论文 2017, 卷号: 5, 期号: 28, 页码: 7043 作者:  Zheng, Zeke[1];  Zeng, Yong[1];  Yao, Rihui[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1] 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17