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	Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
	Abliz, Ablat; Wan, Da; Chen, Jui-Yuan; Xu, Lei; He, Jiawei; Yang, Yanbing; Duan, Haiming; Liu, Chuansheng; Jiang, Changzhong; Chen, Huipeng
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018
卷号	65页码:2844-2849
关键词	passivation layers (PVLs) light illumination stress stability Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO) thin film transistors (TFTs)
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2889380
专题	福州大学
推荐引用方式 GB/T 7714	Abliz, Ablat,Wan, Da,Chen, Jui-Yuan,et al. Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65:2844-2849.
APA	Abliz, Ablat.,Wan, Da.,Chen, Jui-Yuan.,Xu, Lei.,He, Jiawei.,...&Liao, Lei.(2018).Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers.IEEE TRANSACTIONS ON ELECTRON DEVICES,65,2844-2849.
MLA	Abliz, Ablat,et al."Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers".IEEE TRANSACTIONS ON ELECTRON DEVICES 65(2018):2844-2849.

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