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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Development of a new high-speed readout system for soi pixel detectors 期刊论文 Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 480-484 作者:  Nishimura, Ryutaro;  Arai, Yasuo;  Miyoshi, Toshinobu;  Hirano, Keiichi;  Kishimoto, Shunji 收藏  |  浏览/下载：59/0  |  提交时间：2019/04/22 Soi  Pixel detector  Daq  Fpga  X-ray imaging   A prototype soi pixel sensor for cepc vertex 期刊论文 Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 409-416 作者:  Wu, Zhigang;  Lu, Yunpeng;  Zhou, Yang;  Dong, Jing;  Song, Longlong 收藏  |  浏览/下载：98/0  |  提交时间：2019/04/22 Soi pixel sensor  Cepc  Vertex detector   A prototype soi pixel sensor for cepc vertex 期刊论文 Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 409-416 作者:  Wu, Zhigang;  Lu, Yunpeng;  Zhou, Yang;  Dong, Jing;  Song, Longlong 收藏  |  浏览/下载：98/0  |  提交时间：2019/04/22 Soi pixel sensor  Cepc  Vertex detector   Development of a new high-speed readout system for soi pixel detectors 期刊论文 Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 480-484 作者:  Nishimura, Ryutaro;  Arai, Yasuo;  Miyoshi, Toshinobu;  Hirano, Keiichi;  Kishimoto, Shunji 收藏  |  浏览/下载：59/0  |  提交时间：2019/04/22 Soi  Pixel detector  Daq  Fpga  X-ray imaging   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ] 收藏  |  浏览/下载：101/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.9, 页码: 4001-4007 作者:  Guoli Li;  Nicolas André;  Qi Chen;  Huiru Wang;  Laurent A. Francis 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/13 Temperature sensors  P-i-n diodes  Sensitivity  Temperature measurement  Logic gates  Linearity  Linearity  low power  p-i-n diode  sensitivity  SOI  thermal sensing (temperature sensor)   A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395 作者:  Xiaorong Luo;  Yang Yang;  Tao Sun;  Jie Wei;  Diao Fan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Anodes  Resistance  Current density  Silicon-on-insulator  Insulated gate bipolar transistors  Spontaneous emission  Sun  Low-loss  p-type polysilicon  self-adaptive resistance (SAR)  shorted-anode (SA)  snapback-free  silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)   Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: Vol.66 No.9, 页码: 4001-4007 作者:  Li, GL;  Andre, N;  Chen, Q;  Wang, HR;  Francis, LA 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/17 Linearity  low power  p-i-n diode  sensitivity  SOI  thermal sensing (temperature sensor)   Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 249-254 作者:  Yongwei Chang;  Jiexin Luo;  Jing Chen;  Lingda Xu;  Zhan Chai 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/13 MOSFET  circuits  Integrated  circuit  modeling  Semiconductor  device  modeling  Radio  frequency  MOSFET  Analytical  models  Mathematical  model  Body  contact  compact  model  floating  body  effects  (FBEs)  impact  ionization  partially  depleted  silicon-on-insulator  (PD-SOI)  radio  frequency  (RF)  tunnel  diode  body  contact  (TDBC)   Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715 作者:  Shu, Lei;  Wang, Liang;  Zhou, Xin;  Li, Tong-De;  Yuan, Zhang-Yi'an 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)  BVDS variations  laterally diffused metal-oxide-semiconductor (LDMOS)  radiation effects  SOI  technology computer-aided design (TCAD) simulations  total ionizing dose (TID)