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	Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode
	Guoli Li; Nicolas André; Qi Chen; Huiru Wang; Laurent A. Francis; Yun Zeng; Lei Liao; Denis Flandre
刊名	IEEE Transactions on Electron Devices
	2019
卷号	Vol.66 No.9页码:4001-4007
关键词	Temperature sensors P-i-n diodes Sensitivity Temperature measurement Logic gates Linearity Linearity low power p-i-n diode sensitivity SOI thermal sensing (temperature sensor)
ISSN号	0018-9383;1557-9646
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4614375
专题	湖南大学
作者单位	Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
推荐引用方式 GB/T 7714	Guoli Li,Nicolas André,Qi Chen,et al. Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode[J]. IEEE Transactions on Electron Devices,2019,Vol.66 No.9:4001-4007.
APA	Guoli Li.,Nicolas André.,Qi Chen.,Huiru Wang.,Laurent A. Francis.,...&Denis Flandre.(2019).Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode.IEEE Transactions on Electron Devices,Vol.66 No.9,4001-4007.
MLA	Guoli Li,et al."Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode".IEEE Transactions on Electron Devices Vol.66 No.9(2019):4001-4007.

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