| Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode | |
| Li, GL; Andre, N; Chen, Q; Wang, HR; Francis, LA; Zeng, Y; Liao, L; Flandre, D | |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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| 2019 | |
| 卷号 | Vol.66 No.9页码:4001-4007 |
| 关键词 | Linearity low power p-i-n diode sensitivity SOI thermal sensing (temperature sensor) |
| ISSN号 | 0018-9383;1557-9646 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4750815 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Hunan Univ, Sch Phys & Elect, Key Lab Micro Nano Optoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China 2.Hunan Univ, Sch Phys & Elect, Hunan Prov Key Lab Low Dimens Struct Phys & Devic, Changsha 410082, Hunan, Peoples R China 3.Catholic Univ Louvain, Inst Informat & Commun Technol Elect & Appl Math, B-1348 Ottignies, Belgium |
| 推荐引用方式 GB/T 7714 | Li, GL,Andre, N,Chen, Q,et al. Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,Vol.66 No.9:4001-4007. |
| APA | Li, GL.,Andre, N.,Chen, Q.,Wang, HR.,Francis, LA.,...&Flandre, D.(2019).Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode.IEEE TRANSACTIONS ON ELECTRON DEVICES,Vol.66 No.9,4001-4007. |
| MLA | Li, GL,et al."Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode".IEEE TRANSACTIONS ON ELECTRON DEVICES Vol.66 No.9(2019):4001-4007. |
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