CORC

在结果中检索

CORC

浏览/检索结果: 共24条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs 期刊论文
Frontiers of Information Technology & Electronic Engineering, 2017
作者:  Ding P(丁芃);  Jin Z(金智)
收藏  |  浏览/下载：14/0  |  提交时间：2018/05/16
Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22nm all-last high-k/metal-gate pMOSFETs 期刊论文
solid-state electronics, 2016
作者:  Qin ZL(秦长亮)
收藏  |  浏览/下载：10/0  |  提交时间：2017/05/09
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 2
作者:  Shi, YJ;  Huang, S;  Bao, QL;  Wang, XH;  Wei, K
收藏  |  浏览/下载：43/0  |  提交时间：2017/03/11
Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid 期刊论文
APPLIED PHYSICS EXPRESS, 2016, 卷号: 9, 期号: 8
作者:  Zhang, ZL(张志利);  Qin, SJ(秦双娇);  Fu, K(付凯);  Yu, GH(于国浩);  Li, WY
收藏  |  浏览/下载：75/0  |  提交时间：2017/03/11
High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique 期刊论文
IEEE Electron Device Letters, 2015
作者:  Huang S(黄森)
收藏  |  浏览/下载：12/0  |  提交时间：2016/05/26
Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 卷号: 30, 页码: -
作者:  Wang, Qingpeng;  Jiang, Ying;  Zhang, Jiaqi;  Kawaharada, Kazuya;  Li, Liuan
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/09
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer 期刊论文
ieee electron device letters, 2014
Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin J.
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/16
Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs 期刊论文
electronics letters, 2014
Liu, Jingqian; Wang, Jinyan; Xu, Zhe; Jiang, Haisang; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13

©版权所有 ©2017 CSpace - Powered by CSpace