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	Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure
	Wang, Qingpeng; Jiang, Ying; Zhang, Jiaqi; Kawaharada, Kazuya; Li, Liuan; Wang, Dejun; Ao, Jin-Ping
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2015
卷号	30页码:-
关键词	GaN MOSFET recess gate etching damage enhancement mode
ISSN号	0268-1242
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4406607
专题	大连理工大学
作者单位	1.Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan. 2.Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China. 3.Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan. 4.Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Wang, Qingpeng,Jiang, Ying,Zhang, Jiaqi,et al. Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2015,30:-.
APA	Wang, Qingpeng.,Jiang, Ying.,Zhang, Jiaqi.,Kawaharada, Kazuya.,Li, Liuan.,...&Ao, Jin-Ping.(2015).Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,30,-.
MLA	Wang, Qingpeng,et al."Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 30(2015):-.

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