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Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:  Zhu, Tianhua;  Zhuo, Fang
收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19
High performance monolithically integrated GaN Driving VMOSFET on LED (EI收录) 期刊论文
IEEE Electron Device Letters, 2017, 卷号: 38, 页码: 752-755
作者:  Lu, Xing[1];  Liu, Chao[2];  Jiang, Huaxing[2];  Zou, Xinbo[2];  Lau, Kei May[2]
收藏  |  浏览/下载：11/0  |  提交时间：2019/04/24
High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications 期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016
Yi, Shih-Han; Ruan, Dun-Bao; Di, Shaoyan; Liu, Xiaoyan; Wu, Yung Hsien; Chin, Albert
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/04
Research of Optimal Parameters in MOSFET Structure based on Wide Band Gap Semiconductor Material GaN 会议论文
28th Chinese Control and Decision Conference, 2016-01-01
作者:  Shen, Hongyuan[1];  Yang, Jie[2];  Yuan, Zhenyu[3];  Ye, Ning[4];  Di, Jia[5]
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/26
Improvement of device isolation using field implantation for GaN MOSFETs 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 卷号: 31
作者:  Jiang, Ying;  Wang, Qingpeng;  Zhang, Fuzhe;  Li, Liuan;  Shinkai, Satoko
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/09
EMI Modeling and Experiment of a GaN Based LLC Half-Bridge Converter 会议论文
作者:  Tian, Mofan;  Hao, Yuan;  Wang, Kangping;  Xuan, Yang;  Huang, Lang
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/02
A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 卷号: 30, 页码: -
作者:  Wang, Qingpeng;  Jiang, Ying;  Zhang, Jiaqi;  Kawaharada, Kazuya;  Li, Liuan
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/09
Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process 期刊论文
APPLIED PHYSICS EXPRESS, 2015, 卷号: 8, 页码: -
作者:  Wang, Qingpeng;  Jiang, Ying;  Zhang, Jiaqi;  Li, Liuan;  Kawaharada, Kazuya
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/09
Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 卷号: 30, 页码: -
作者:  Wang, Qingpeng;  Jiang, Ying;  Zhang, Jiaqi;  Kawaharada, Kazuya;  Li, Liuan
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/09
干法刻蚀辅助型GaN MOSFET的器件工艺及电学特性研究 学位论文
: 大连理工大学, 2015
作者:  王青鹏
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/09

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