Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 孙钱团队

	Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
	Shi, YJ; Huang, S; Bao, QL; Wang, XH; Wei, K; Jiang, HJ; Li, JF; Zhao, C; Li, SM; Zhou, Y(周宇)
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2016
卷号	63 期号:2
英文摘要	Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiNx (LPCVD-SiNx) passivation and high-temperature low-damage gate-recess technique. The high-thermal-stability LPCVD-SiNx enables a passivation-prior-to-ohmic process strategy and effectively suppresses deep states at the passivation/HEMT interface. The fabricated MIS-HEMTs feature a high V-TH of +0.85 V at the drain current of 1 mu A/mm and a remarkable ON/OFF current ratio of 10(10) while reduced dynamic ON-resistance as compared to plasma-enhanced chemical-vapor-deposited SiO2 passivation. High field-effect channel mobility of 180 cm(2)/V . s is achieved, leading to a high maximum drain current density of 663 mA/mm.
关键词[WOS]	HIGH-THRESHOLD VOLTAGE ; ENHANCEMENT-MODE ; ALGAN/GAN HEMT ; TRANSISTORS ; RESISTANCE ; INTERFACE ; METAL
收录类别	SCI
语种	英语
WOS记录号	WOS:000369304700013
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4721]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队
推荐引用方式 GB/T 7714	Shi, YJ,Huang, S,Bao, QL,et al. Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(2).
APA	Shi, YJ.,Huang, S.,Bao, QL.,Wang, XH.,Wei, K.,...&Liu, XY.(2016).Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(2).
MLA	Shi, YJ,et al."Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.2(2016).