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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films 期刊论文 materials science and engineering b-advanced functional solid-state materials, 2009, 卷号: 162, 期号: 3, 页码: 209-212 Sun LL; Yan FW; Zhang HX; Wang JX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载：92/1  |  提交时间：2010/03/08 Ion implantation  Metal organic chemical vapour deposition (MOCVD)  Diluted magnetic semiconductor (DMS)  Nonpolar a-plane GaN   Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105 作者:  Zhang XW;  Yin ZG;  You JB 收藏  |  浏览/下载：99/13  |  提交时间：2010/03/08 atomic force microscopy  field emission  hydrogen  II-VI semiconductors  plasma materials processing  sputter deposition  wide band gap semiconductors  work function  zinc compounds   Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals 期刊论文 journal of vacuum science & technology b, 2009, 卷号: 27, 期号: 3, 页码: 1093-1096 Wang HL; Xing MX; Ren G; Zheng WH 收藏  |  浏览/下载：122/0  |  提交时间：2010/03/08 III-V semiconductors  indium compounds  photonic crystals  plasma materials processing  semiconductor lasers  sputter etching   Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427 Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao) 收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11 ion implantation  annealing  chemical etching  photoluminescence  POROUS SILICON  LUMINESCENCE   Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218 Dong HW; Zhao YW; Li JM 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 semi-insulating InP  ion implantation  silicon  annealing  activation  SI+-IMPLANTATION  PHOSPHIDE VAPOR  UNDOPED INP  FE  WAFERS  UNIFORMITY  PRESSURE