Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals

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	Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals
	Wang HL ; Xing MX ; Ren G ; Zheng WH
刊名	journal of vacuum science & technology b
	2009
卷号	27 期号:3 页码:1093-1096
关键词	III-V semiconductors indium compounds photonic crystals plasma materials processing semiconductor lasers sputter etching
ISSN号	1071-1023
通讯作者	zheng wh chinese acad sci inst semicond nanooptoelect lab beijing 100083 peoples r china. e-mail address: whzheng@red.semi.ac.cn
中文摘要	the authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in inp. the etching was performed at 70 degrees c using bcl3/cl-2 chemistries. a high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. the process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.
学科主题	光电子学
收录类别	SCI
资助信息	national programs of china 10634080 60677046608380032006cb921700 this work was supported by national programs of china (grant nos. 10634080, 60677046, 60838003, and 2006cb921700).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7141]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang HL,Xing MX,Ren G,et al. Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals[J]. journal of vacuum science & technology b,2009,27(3):1093-1096.
APA	Wang HL,Xing MX,Ren G,&Zheng WH.(2009).Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals.journal of vacuum science & technology b,27(3),1093-1096.
MLA	Wang HL,et al."Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals".journal of vacuum science & technology b 27.3(2009):1093-1096.