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	Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance
	Wan, Da; Liu, Xingqiang; Abliz, Ablat; Liu, Chuansheng; Yang, Yanbing; Wu, Wei; Li, Guoli; Li, Jinchai; Chen, Huipeng; Guo, Tailiang
刊名	IEEE Transactions on Electron Devices
	2018
卷号	65期号:3
ISSN号	0018-9383
DOI	10.1109/TED.2018.2797300
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4224290
专题	武汉大学
推荐引用方式 GB/T 7714	Wan, Da,Liu, Xingqiang,Abliz, Ablat,et al. Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance[J]. IEEE Transactions on Electron Devices,2018,65(3).
APA	Wan, Da.,Liu, Xingqiang.,Abliz, Ablat.,Liu, Chuansheng.,Yang, Yanbing.,...&Liao, Lei.(2018).Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance.IEEE Transactions on Electron Devices,65(3).
MLA	Wan, Da,et al."Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance".IEEE Transactions on Electron Devices 65.3(2018).

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