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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
Abliz, Ablat; Xu, Lei; Wan, Da; Duan, Haiming; Wang, Jingli; Wang, Chunlan; Luo, Shijun; Liu, Chuansheng
刊名APPLIED SURFACE SCIENCE
2019
卷号475
关键词Zinc oxide (ZnO) Thin film transistors (TFTs) Bias stress stability Doping
ISSN号0169-4332
DOI10.1016/j.apsusc.2018.12.236
URL标识查看原文
收录类别SCIE
语种英语
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4216813
专题武汉大学
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GB/T 7714
Abliz, Ablat,Xu, Lei,Wan, Da,et al. Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors[J]. APPLIED SURFACE SCIENCE,2019,475.
APA Abliz, Ablat.,Xu, Lei.,Wan, Da.,Duan, Haiming.,Wang, Jingli.,...&Liu, Chuansheng.(2019).Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors.APPLIED SURFACE SCIENCE,475.
MLA Abliz, Ablat,et al."Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors".APPLIED SURFACE SCIENCE 475(2019).
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