Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors | |
Abliz, Ablat; Xu, Lei; Wan, Da; Duan, Haiming; Wang, Jingli; Wang, Chunlan; Luo, Shijun; Liu, Chuansheng | |
刊名 | APPLIED SURFACE SCIENCE |
2019 | |
卷号 | 475 |
关键词 | Zinc oxide (ZnO) Thin film transistors (TFTs) Bias stress stability Doping |
ISSN号 | 0169-4332 |
DOI | 10.1016/j.apsusc.2018.12.236 |
URL标识 | 查看原文 |
收录类别 | SCIE |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4216813 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Abliz, Ablat,Xu, Lei,Wan, Da,et al. Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors[J]. APPLIED SURFACE SCIENCE,2019,475. |
APA | Abliz, Ablat.,Xu, Lei.,Wan, Da.,Duan, Haiming.,Wang, Jingli.,...&Liu, Chuansheng.(2019).Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors.APPLIED SURFACE SCIENCE,475. |
MLA | Abliz, Ablat,et al."Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors".APPLIED SURFACE SCIENCE 475(2019). |
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