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Effect of Ar ion irradiation on the room temperature ferromagnetism of undoped and Cu-doped rutile TiO2 single crystals 期刊论文
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 1-11
作者:  Xu, NN;  Li, GP;  Lin, QL;  Liu, H;  Bao, LM
收藏  |  浏览/下载:3/0  |  提交时间:2017/05/09
Study on the optical characteristic of "black silicon" antireflection coating prepared by plasma immersion ion implantation 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 14, 页码: -
作者:  Liu, J;  Liu, BW;  Xia, Y;  Li, CB;  Liu, S
收藏  |  浏览/下载:3/0  |  提交时间:2015/05/25
Effect of Co+ implantation on structural and optical properties in single-crystal TiO2 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 11, 页码: 492-496
作者:  Li, TJ;  Li, GP;  Ma, JP;  Gao, XX
收藏  |  浏览/下载:4/0  |  提交时间:2015/12/15
The structural, magnetic, and optical properties of ZnO (0001) wafers implanted with Co ions 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 10, 页码: 1819-1822
作者:  Li, TJ;  Li, GP;  Chen, JS;  Gao, XX;  Pan, XD
收藏  |  浏览/下载:3/0  |  提交时间:2015/12/15
Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 10, 页码: 7108-7113
作者:  Su, HQ;  Xue, SW;  Chen, M;  Li, ZJ;  Yuan, ZL
收藏  |  浏览/下载:3/0  |  提交时间:2015/05/25
Effects of different ions implantation on yellow luminescence from GaN 期刊论文
PHYSICA B-CONDENSED MATTER, 2008, 卷号: 403, 期号: 17, 页码: 2666-2670
作者:  You, W;  Zhang, XD;  Zhang, LM;  Yang, Z;  Bian, H
收藏  |  浏览/下载:3/0  |  提交时间:2015/12/15
Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN 期刊论文
CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2008, 卷号: 6, 期号: 2, 页码: 283-288
作者:  Zhang, LM;  Zhang, XD;  You, W;  Yang, Z;  Wang, WX
收藏  |  浏览/下载:4/0  |  提交时间:2015/12/15
Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 10, 页码: 5487-5493
作者:  Zhang, XD;  Lin, DX;  Li, GP;  You, W;  Zhang, LM
收藏  |  浏览/下载:1/0  |  提交时间:2015/12/15
Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC 期刊论文
CHINESE PHYSICS, 2005, 卷号: 14, 期号: 3, 页码: 599-603
作者:  Xin, G;  Sun, GS;  Li, JM;  Zhang, YX;  Lei, W
收藏  |  浏览/下载:2/0  |  提交时间:2015/05/25
Research on molecular modification of L(+)-cysteine induced by 110 keV Fe+ ion beam irradiation 期刊论文
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2003, 卷号: 27, 期号: 5, 页码: 460-464
作者:  Yuan, SB;  Wei, ZQ;  Li, WJ;  Gao, QX
收藏  |  浏览/下载:3/0  |  提交时间:2015/12/14


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