Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

	Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC
	Xin, G; Sun, GS; Li, JM; Zhang, YX; Lei, W; Zhao, WS; Zeng, YP
刊名	CHINESE PHYSICS
	2005-03
卷号	14 期号:3 页码:599-603
关键词	ion implantation silicon carbide phosphorus photoluminescence
ISSN号	1009-1963
通讯作者	Xin, G (reprint author), Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
学科主题	Physics
语种	英语
WOS记录号	WOS:000227798000031
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/103931]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Xin, G,Sun, GS,Li, JM,et al. Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC[J]. CHINESE PHYSICS,2005,14(3):599-603.
APA	Xin, G.,Sun, GS.,Li, JM.,Zhang, YX.,Lei, W.,...&Zeng, YP.(2005).Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC.CHINESE PHYSICS,14(3),599-603.
MLA	Xin, G,et al."Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC".CHINESE PHYSICS 14.3(2005):599-603.