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	Research of Optimal Parameters in MOSFET Structure based on Wide Band Gap Semiconductor Material GaN
	Shen, Hongyuan[1]; Yang, Jie[2]; Yuan, Zhenyu[3]; Ye, Ning[4]; Di, Jia[5]; Mo, Jingyan[6]
	2016
会议名称	28th Chinese Control and Decision Conference
会议日期	2016-01-01
关键词	GaN Optimal Parameters High-Temperature Environment
页码	6086-6089
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2229575
专题	上海大学
作者单位	1.[1]Northeastern Univ, Coll Informat Sci & Engn, Shenyang 110819, Peoples R China. 2.[2]Northeastern Univ, Coll Informat Sci & Engn, Shenyang 110819, Peoples R China. 3.[3]Northeastern Univ, Coll Informat Sci & Engn, Shenyang 110819, Peoples R China. 4.[4]Northeastern Univ, Coll Informat Sci & Engn, Shenyang 110819, Peoples R China. 5.[5]Univ Arkansas, Comp Sci & Comp Engn Dept, Fayetteville, AR 72701 USA. 6.[6]Shanghai Univ, Sch Commun & Informat Engn, Shanghai, Peoples R China.
推荐引用方式 GB/T 7714	Shen, Hongyuan[1],Yang, Jie[2],Yuan, Zhenyu[3],et al. Research of Optimal Parameters in MOSFET Structure based on Wide Band Gap Semiconductor Material GaN[C]. 见:28th Chinese Control and Decision Conference. 2016-01-01.

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