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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
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  |  
浏览/下载:39/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect
期刊论文
NANOPHOTONICS, 2020, 卷号: 9, 期号: 11, 页码: 3663-3672
作者:
Jiang, Hao
;
Nie, Changbin
;
Fu, Jintao
;
Tang, Linlong
;
Shen, Jun
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2020/10/12
graphene
manipulation
photodetector
photogating effect
silicon-on-insulator
Design and fabrication of 1×N polarization-insensitive beam splitters based on 2D subwavelength gratings
期刊论文
Optics Communications, 2020, 卷号: 456
作者:
Wu, Gang
;
Huang, Yongqing
;
Duan, Xiaofeng
;
Liu, Kai
;
Ma, Xiaokai
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2020/11/14
Fabrication
Optical beam splitters
Optical instruments
Polarization
Silicon on insulator technology
Silicon wafers
Wavefronts
Beam splitter
High index contrast
Phase contral
Polarization sensitivity
Polarization-insensitive
Silicon on insulator wafers
Sub-wave length grating
The rigorous coupledwave analyses (RCWA)
Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381
作者:
Cai, Chang
;
Liu, Tianqi
;
Zhao, Peixiong
;
Fan, Xue
;
Huang, Hongyang
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2022/01/19
D filp-flops (DFFs)
heavy ions
radiation hardening
single-event upsets (SEUs)
ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FDSOI)
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:
Xiaorong Luo
;
Yang Yang
;
Tao Sun
;
Jie Wei
;
Diao Fan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/17
Anodes
Resistance
Current density
Silicon-on-insulator
Insulated gate bipolar transistors
Spontaneous emission
Sun
Low-loss
p-type polysilicon
self-adaptive resistance (SAR)
shorted-anode (SA)
snapback-free
silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 249-254
作者:
Yongwei Chang
;
Jiexin Luo
;
Jing Chen
;
Lingda Xu
;
Zhan Chai
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/13
MOSFET
circuits
Integrated
circuit
modeling
Semiconductor
device
modeling
Radio
frequency
MOSFET
Analytical
models
Mathematical
model
Body
contact
compact
model
floating
body
effects
(FBEs)
impact
ionization
partially
depleted
silicon-on-insulator
(PD-SOI)
radio
frequency
(RF)
tunnel
diode
body
contact
(TDBC)
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715
作者:
Shu, Lei
;
Wang, Liang
;
Zhou, Xin
;
Li, Tong-De
;
Yuan, Zhang-Yi'an
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)
BVDS variations
laterally diffused metal-oxide-semiconductor (LDMOS)
radiation effects
SOI
technology computer-aided design (TCAD) simulations
total ionizing dose (TID)
Heterogeneous integration of LN and Si3N4 waveguides using an optical interlayer coupler
期刊论文
OPTICS COMMUNICATIONS, 2019, 卷号: 436, 页码: 1-6
作者:
Liu, Danni
;
Feng, Lishuang
;
Jia, Yongze
;
Ma, Honghao
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/30
Integrated optics
Lithium niobate on insulator
Silicon nitride
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