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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell 期刊论文 Solid-State Electronics, 2019, 卷号: 152, 页码: 46-52 作者:  Xu, Zhaozhao;  Liu, Donghua;  Hu, Jun;  Chen, Wenjie;  Qian, Wensheng 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/19 2-bit/cell  Device-scaling  Drain induced barrier lowering effects  Source-side injection  Split gates   Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer 期刊论文 Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737 作者:  Dai, Lihua;  Bi, Dawei;  Ning, Bingxu;  Hu, Zhiyuan;  Song, Lei 收藏  |  浏览/下载：59/0  |  提交时间：2019/05/09 Buried oxide  Interface trap  Silicon ion implantation  Soi nmosfets  Total dose radiation   A 0.5-v novel complementary current-reused cmos lna for 2.4 ghz medical application 期刊论文 Microelectronics journal, 2016, 卷号: 55, 页码: 64-69 作者:  Dai, Ruofan;  Zheng, Yunlong;  He, Jun;  Liu, Guojun;  Kong, Weiran 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/09 Low voltage  Lna  Modified complementary current-reused  Diode connected mosfet bias  Forward body-bias  Harmonic rejection   Design of an ultra-broadband and fabrication-tolerant silicon polarization rotator splitter with sio2 top cladding 期刊论文 Chinese optics letters, 2016, 卷号: 14, 期号: 8, 页码: 5 作者:  Chen, Xin;  Qiu, Chao;  Sheng, Zhen;  Wu, Aimin;  Huang, Haiyang 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/09 Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology 期刊论文 Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 4, 页码: 2402-2408 作者:  Chen, Zhuojun;  Lin, Min;  Zheng, Yunlong;  Wei, Zuodong;  Huang, Shuigen 收藏  |  浏览/下载：42/0  |  提交时间：2019/05/09 Heavy-ion testing  Pd-soi  Phase-locked loop  Pulsed-laser testing  Radiation hardening by design  Single-event transients   Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology 期刊论文 Ieice electronics express, 2016, 卷号: 13, 期号: 12, 页码: 11 作者:  Zheng Yunlong;  Dai Ruofan;  Chen Zhuojun;  Sun Shulong;  Wang Zheng 收藏  |  浏览/下载：38/0  |  提交时间：2019/05/09 Direct measurement  Heavy ion irradiation  Silicon on insulator technology  Single event transient  Mosfet  Radiation harden by design   Patterned SIMOX technique for deep sub-micron DSOI devices 期刊论文 Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2005, 卷号: 26, 期号: 6, 页码: 1187-1190 Tao,Kai; Dong,Yemin; Yi,Wanbing; Wang,Xi; Zou,Shichang 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/24 Effect of Xe+ ion bombardment during titanium deposition in nitrogen atmosphere 期刊论文 Materials Science and Engineering, A156(1992)91-95, 1992, 卷号: 156, 期号: 1, 页码: 91-95 Xi Wang, Genqing Yang, Xianghuai Liu, Zhihong Zheng, Wei Huang and Shichang Zou 收藏  |  浏览/下载：14/0  |  提交时间：2012/06/13 Computer simulation of ion beam enhanced deposition of titanium nitride films 期刊论文 Proc. of Mater. Res. Soc., 157(1989)91,, 1989, 卷号: 157, 页码: 91 Wang Xi; Zhou Jiankun; Chen Youshan, Liu Xianghuai and Zou Shichang 收藏  |  浏览/下载：13/0  |  提交时间：2012/06/19