QQ客服 官方微博 反馈留言

	Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer
	Dai, Lihua1,2; Bi, Dawei1; Ning, Bingxu1; Hu, Zhiyuan1; Song, Lei1,2; Liu, Xiaonian1,2; Zhang, Mengying1,2; Zhang, Zhengxuan1; Zou, Shichang1
刊名	Ieee transactions on nuclear science
	2016-10-01
卷号	63期号:5页码:2731-2737
关键词	Buried oxide Interface trap Silicon ion implantation Soi nmosfets Total dose radiation
ISSN号	0018-9499
DOI	10.1109/tns.2016.2604342
通讯作者	Dai, lihua(davidb@mail.sim.ac.cn)
英文摘要	We have investigated the direct-current characteristics of the 130-nm partially depleted soi nmosfets fabricated on modified wafer with silicon ion implantation and control wafer before and after total dose radiation. due to the deep electron traps in buried oxide, the back gate threshold voltage of the modified soi device increases when hot electrons are injected into the buried oxide. moreover, due to this electrons injection process, the top-si/buried-oxide interface produces donor-like electron traps, which results in a kink effect in i-v characteristic curve and double gm peak behavior in back gate transistor. by tcad simulation, we have demonstrated that the deformation of the i-v curve depends on the density of the interface trap on the premise of double gm peak generation. it was speculated that hot electrons injection could produce si-o weak bond and weak interaction with the peculiar bonding parameter at the top-si/box interface. finally, the radiation results show that silicon ion implantation can effectively enhance the radiation hardness performance of the soi material.
WOS关键词	BURIED OXIDES ; THERMAL OXIDES ; SIMOX ; HOLE ; MOSFETS ; IMPLANTATION ; GENERATION ; BESOI
WOS研究方向	Engineering ; Nuclear Science & Technology
WOS类目	Engineering, Electrical & Electronic ; Nuclear Science & Technology
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000386228400018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2375002
专题	中国科学院大学
通讯作者	Dai, Lihua
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Dai, Lihua,Bi, Dawei,Ning, Bingxu,et al. Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer[J]. Ieee transactions on nuclear science,2016,63(5):2731-2737.
APA	Dai, Lihua.,Bi, Dawei.,Ning, Bingxu.,Hu, Zhiyuan.,Song, Lei.,...&Zou, Shichang.(2016).Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer.Ieee transactions on nuclear science,63(5),2731-2737.
MLA	Dai, Lihua,et al."Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer".Ieee transactions on nuclear science 63.5(2016):2731-2737.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。