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	Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology
	Chen, Zhuojun1,2; Lin, Min1; Zheng, Yunlong1; Wei, Zuodong1; Huang, Shuigen1; Zou, Shichang1
刊名	Ieee transactions on nuclear science
	2016-08-01
卷号	63期号:4页码:2402-2408
关键词	Heavy-ion testing Pd-soi Phase-locked loop Pulsed-laser testing Radiation hardening by design Single-event transients
ISSN号	0018-9499
DOI	10.1109/tns.2016.2590420
通讯作者	Chen, zhuojun(zjchen@mail.sim.ac.cn)
英文摘要	In this paper, a radiation-tolerant phase-locked loop (pll) is designed and fabricated with 130 nm pd-soi technology. a current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (dcc) layout of the complementary switches. besides, the stacked soi transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. the experimental results show that the proposed pll has no significant jitter variations under heavy-ion experiments, compared with tmr-hardened pll. besides, pulsed-laser testing comprehensively characterizes the single-event transients of the pll and demonstrates its radiation tolerant performance.
WOS关键词	SET SENSITIVITY ; DESIGN ; CMOS ; OSCILLATOR
WOS研究方向	Engineering ; Nuclear Science & Technology
WOS类目	Engineering, Electrical & Electronic ; Nuclear Science & Technology
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000382469200019
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2376358
专题	中国科学院大学
通讯作者	Chen, Zhuojun
作者单位	1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Chen, Zhuojun,Lin, Min,Zheng, Yunlong,et al. Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology[J]. Ieee transactions on nuclear science,2016,63(4):2402-2408.
APA	Chen, Zhuojun,Lin, Min,Zheng, Yunlong,Wei, Zuodong,Huang, Shuigen,&Zou, Shichang.(2016).Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology.Ieee transactions on nuclear science,63(4),2402-2408.
MLA	Chen, Zhuojun,et al."Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology".Ieee transactions on nuclear science 63.4(2016):2402-2408.

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