CORC

在结果中检索

CORC

浏览/检索结果: 共276条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs 期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:  Yu, Cheng-hao;  Guo, Hao-min;  Liu, Yan;  Wu, Xiao-dong;  Zhang, Li-long
收藏  |  浏览/下载：11/0  |  提交时间：2023/11/10
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏  |  浏览/下载：40/0  |  提交时间：2022/03/24
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载：15/0  |  提交时间：2020/07/11
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15
Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process 期刊论文
IEEE Electron Device Letters, 2018
作者:  Zhang QZ(张青竹);  Yin HX(殷华湘);  Meng LK(孟令款);  Yao JX(姚佳欣);  Li JJ(李俊杰)
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/05
Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57
作者:  Zhang, Guohe;  Yang, Jiangjiang;  Jiang, Peilin;  Bu, Jianhui;  Li, Binhong
收藏  |  浏览/下载：2/0  |  提交时间：2019/11/19
Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile 期刊论文
IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690
作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Chen, Chi-Cheng
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26
Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Li-Hui; Lin, Yu-Shan; Liu, Xi-Wen; Liao, Jih-Chien; Lin, Chien-Yu; Lien, Chen-Hsin; Chang, Kuan-Chang; Zhang, Sheng-Dong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Cheng, Ran; Yin, Longxiang; Wu, Heng; Yu, Xiao; Zhang, Yanyan; Zheng, Zejie; Wu, Wangran; Chen, Bing; Ye, Peide D.; Liu, Xiaoyan; Zhao, Yi
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03

©版权所有 ©2017 CSpace - Powered by CSpace