High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime

doi:10.1109/TED.2018.2873717

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	High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
	Yang, Yumei 1; Lou, Haijun 2,3; Lin, Xinnan 3
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018-12
卷号	65 期号:12 页码:5282-5288
关键词	High-k spacer junctionless nonequilibrium Green function (NEGF) quantum simulator
ISSN号	0018-9383
DOI	10.1109/TED.2018.2873717
英文摘要	In this paper, we investigate the impact of spacer dielectrics on the ultrascaled silicon gate-all-around junctionless transistor in the ballistic regime based on the in-house 3-D quantum simulator that self-consistently solves mode-space nonequilibrium Green function formalism and Poisson's equation. Then, the impact of device parameters, such as lengths of source/drain region and channel, channel width, and nanowire direction, on the static performance is also discussed in detail. An available range of spacer dielectric constant is further selected. Results show that the high-k spacer introduced in the ultrascaled junctionless transistor can effectively enhance the direct-current performance of the device and suppress the variation of drain current and subthreshold characteristics induced by the aforementioned device parameters. It will be a great benefit for the junctionless device with a gate-all-around structure as the scaling continues to approach the end of MOSFETs.
资助项目	Shenzhen Key Laboratory Project[ZDSYS20170303140513705]
WOS研究方向	Engineering ; Physics
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000451255200003
状态	已发表
内容类型	期刊论文
源URL	[http://119.78.100.223/handle/2XXMBERH/32319]
专题	理学院
通讯作者	Lou, Haijun
作者单位	1.Lanzhou Univ Technol, Sch Sci, Lanzhou 730050, Gansu, Peoples R China 2.Zhejiang Univ, Inst Adv Technol, Hangzhou 310058, Zhejiang, Peoples R China 3.Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen Key Lab Adv Electron Device & Integrat, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Yang, Yumei,Lou, Haijun,Lin, Xinnan. High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65(12):5282-5288.
APA	Yang, Yumei,Lou, Haijun,&Lin, Xinnan.(2018).High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime.IEEE TRANSACTIONS ON ELECTRON DEVICES,65(12),5282-5288.
MLA	Yang, Yumei,et al."High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime".IEEE TRANSACTIONS ON ELECTRON DEVICES 65.12(2018):5282-5288.