Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

	Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process
	Zhang QZ(张青竹); Yin HX(殷华湘); Meng LK(孟令款); Yao JX(姚佳欣); Li JJ(李俊杰); Wang GL(王桂磊); Li YD(李昱东); Wu ZH(吴振华); Xiong WJ(熊文娟); Hong Yang
刊名	IEEE Electron Device Letters
	2018-02-19
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19083]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zhang QZ,Yin HX,Meng LK,et al. Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process[J]. IEEE Electron Device Letters,2018.
APA	Zhang QZ.,Yin HX.,Meng LK.,Yao JX.,Li JJ.,...&Ye TC.(2018).Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process.IEEE Electron Device Letters.
MLA	Zhang QZ,et al."Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process".IEEE Electron Device Letters (2018).