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CORC

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Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文
nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359
作者:  Tan PH
收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05
Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE) 期刊论文
光子学报, 2008, 卷号: 37, 期号: 6, 页码: 1107-1111
NIU Zhihong; REN Zhengwei; HE Zhenhong
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载：85/0  |  提交时间：2010/04/11
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:  Yang XH
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005
Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC
收藏  |  浏览/下载：110/24  |  提交时间：2010/03/29
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan)
收藏  |  浏览/下载：82/21  |  提交时间：2010/03/29
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载：81/0  |  提交时间：2010/04/11
Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy 期刊论文
chinese physics, 2003, 卷号: 12, 期号: 2, 页码: 218-221
Zhou DY; Lan Q; Kong YC; Miao ZH; Feng SL; Niu ZC
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29
ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文
plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174
Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG
收藏  |  浏览/下载：78/7  |  提交时间：2010/08/12

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