Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

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	Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy
	Zhou DY ; Lan Q ; Kong YC ; Miao ZH ; Feng SL ; Niu ZC
刊名	chinese physics
	2003
卷号	12 期号:2 页码:218-221
关键词	molecular beam epitaxy (MBE) step bunching InGaAs quantum wire SURFACE-DIFFUSION GROWTH DOTS
ISSN号	1009-1963
通讯作者	zhou dy,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	atomic hydrogen assisted molecular beam epitaxy (mbe) is a novel type of epitaxial growth of nanostructures. the gaas (311)a surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. the step arrays extend over several mum without displacement. the ingaas quantum wire arrays are grown on the step arrays as the basis. our results may prompt further development of more uniform quantum wire and quantum dot arrays.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11658]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou DY,Lan Q,Kong YC,et al. Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy[J]. chinese physics,2003,12(2):218-221.
APA	Zhou DY,Lan Q,Kong YC,Miao ZH,Feng SL,&Niu ZC.(2003).Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy.chinese physics,12(2),218-221.
MLA	Zhou DY,et al."Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy".chinese physics 12.2(2003):218-221.