Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

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	Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)
	NIU Zhihong ; REN Zhengwei ; HE Zhenhong
刊名	光子学报
	2008
卷号	37 期号:6 页码:1107-1111
中文摘要	step like morphology of (331)a high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (mbe) growth has been investigated. atomic force microscope (afm) measurements show that in conventional mbe, the step heights and terrace widths of gaas layers increase monotonically with increasing substrate temperatures. the terrace widths and step densities increase with increasing the gaas layer thickness and then saturates. and, in atomic hydrogen assisted mbe, the terrace width reduces and density increases when depositing the same amount of gaas. it attributes this to the reduced surface migration length of ga adatoms with atomic hydrogen. laterally ordered inas self-aligned nano-wires were grown on gaas (331)a surfaces and its optical polarization properties were revealed by photoluminescence measurements.
学科主题	半导体物理
收录类别	CSCD
资助信息	supported by national natural science foundation of china(6 176 6)
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16037]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	NIU Zhihong,REN Zhengwei,HE Zhenhong. Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)[J]. 光子学报,2008,37(6):1107-1111.
APA	NIU Zhihong,REN Zhengwei,&HE Zhenhong.(2008).Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE).光子学报,37(6),1107-1111.
MLA	NIU Zhihong,et al."Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)".光子学报 37.6(2008):1107-1111.