Photoluminescence of CdSe nanowires grown with and without metal catalyst | |
Tan PH | |
刊名 | nano research |
2011 | |
卷号 | 4期号:4页码:343-359 |
关键词 | CdSe nanowires photoluminescence CHEMICAL-VAPOR-DEPOSITION SHAPE-SELECTIVE SYNTHESIS LIQUID-SOLID MECHANISM OPTICAL-PROPERTIES SILICON NANOWIRES SI NANOWIRES ZNSE NANOWIRES SEMICONDUCTOR NANOCRYSTALS STRUCTURAL-PROPERTIES EPITAXIAL-GROWTH |
ISSN号 | 1998-0124 |
通讯作者 | ferrari, ac, univ cambridge, dept engn, cambridge cb3 0fa, englandacf26@eng.cam.ac.uk |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | european research council ; cambridge integrated knowledge centre in advanced manufacturing technologies for photonics and electronics ; emmanuel college, cambridge ; national natural science foundation of china (nsfc) [10874177]; royal society |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | we present temperature and power dependent photoluminescence measurements on cdse nanowires synthesized via vapor-phase with and without the use of a metal catalyst. nanowires produced without a catalyst can be optimized to yield higher quantum efficiency, and narrower and spatially uniform emission, when compared to the catalyst-assisted ones. emission at energies lower than the band-edge is also found in both cases. by combining spatially-resolved photoluminescence and electron microscopy on the same nanowires, we show that catalyst-free nanowires exhibit a low-energy peak with sharp phonon replica, whereas for catalyst-assisted nanowires low-energy emission is linked to the presence of nanostructures with extended morphological defects. |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/20871] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Tan PH. Photoluminescence of CdSe nanowires grown with and without metal catalyst[J]. nano research,2011,4(4):343-359. |
APA | Tan PH.(2011).Photoluminescence of CdSe nanowires grown with and without metal catalyst.nano research,4(4),343-359. |
MLA | Tan PH."Photoluminescence of CdSe nanowires grown with and without metal catalyst".nano research 4.4(2011):343-359. |
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